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Charge transport in high-performance ink-jet printed silylethynyl substituted pentacene/insulating polymer blend thin-film transistors

Xiaoran Li, Wiljan T.T. Smaal, Charlotte Kjellander, Bas van der Putten, Kevin Gualandris, John Anthony, Dirk J. Broer, Paul W.M. Blom, Jan Genoe and Gerwin Gelinck, Amsterdam (2011)

We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on small molecule/insulating polymer blends. Under optimal conditions the transistor performance of the blends is significantly higher: an increase in mobility is accompanied by a strong enhancement of the sub-threshold characteristics. We found that the sharp turn-on in current in the blends is the result of a tunneling barrier that originates from a thin insulating layer between the injecting contacts and the semiconductor channel.

Partners : TNO, imec

Place of Publication : Amsterdam

Date of Publication : 2011/05/10

Additional Data : Organic Electronics 12 (2011) 1319–1327

Link to the online version of the article.

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