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Doping kinetics of organic semiconductors investigated by field-effect transistors

F. Maddalena, E. J. Meijer, K. Asadi, D. M. de Leeuw and P. W. M. Blom, New York (2011)

The kinetics of acid doping of the semiconductor regioregular poly-3-hexylthiophene with vaporized chlorosilane have been investigated using field-effect transistors. The dopant density has been derived as a function of temperature and exposure time from the shift in the pinch-off voltage, being the gate bias where current starts to flow. The doping kinetics are perfectly described by empirical stretched exponential time dependence with a saturation dopant density of 1±0.5×1026 m−3 and a thermally activated relaxation time. We show that a similar relationship holds for previously reported kinetics of poly-thienylene-vinylene doped with molecular oxygen.

Partners : RuG, Philips, TNO

Place of Publication : New York

Date of Publication : 2010/07/27

Additional Data : Appl. Phys. Lett. 97, 043302

Link to the online version of the article.

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