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Gas sensing with self-assembled monolayer field-effect transistors

Anne-Marije Andringa, Mark-Jan Spijkman, Edsger C.P. Smits, Simon G.J. Mathijssen, Paul A. van Hal, Sepas Setayesh, Nico P. Willard, Oleg V. Borshchev, Sergei A. Ponomarenko, Paul W.M. Blom, Dago M. de Leeuw, Amsterdam (2010)

A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for direct NO detection using iron porphyrin as a specific receptor. Upon exposure to NO a threshold voltage shift towards positive gate biases was observed. The sensor response was examined as a function of NO concentration. High sensitivity has been demonstrated by detection of ppb concentrations of NO. Preliminary measurements have been performed to determine the selectivity.

Partners : RuG, Philips, TNO

Place of Publication : Amsterdam

Date of Publication : 2010/02/16

Additional Data : Organic Electronics 11 (2010) 895–898

Link to the online version of the article.

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