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Graphene transistors via in-situ voltageinduced reduction of graphene-oxide under ambient conditions

Jeffrey M. Mativetsky, Andrea Liscio, Emanuele Treossi, Alberto Zanelli, Paolo Samorì, Vincenzo Palermo, New York (2011)

Here, we describe a simple approach to fabricate graphene-based field-effect-transistors (FETs), starting from aqueous solutions of graphene-oxide (GO), processed entirely under ambient conditions. The process relies on the site-selective reduction of GO sheets deposited in between or on the surface of micro/nanoelectrodes. The same electrodes are first used for voltage-induced electrochemical GO reduction, and then as the source and drain contacts of FETs, allowing for the straightforward production and characterization of ambipolar graphene devices. With the use of nanoelectrodes, we could reduce different selected areas belonging to one single sheet as well.

Partners : UdS

Place of Publication : New York

Date of Publication : 2011/08/09

Link to the online version of the article.

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