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Local current mapping and patterning of reduced graphene oxide

Local current mapping and patterning of reduced graphene oxide

Jeffrey M. Mativetsky, Emanuele Treossi, Emanuele Orgiu, Manuela Melucci, Giulio Paolo Veronese, Paolo Samorì and Vincenzo Palermo, Washington (2010)

The remarkable electrical characteristics of graphene are well documented; however, little is known about the influence of the nanometer- and micrometer-scale structure (including defects and multilayers) on the local electronic properties. Here, we show conducting atomic force microscopy (C-AFM) measurements correlating the detailed structural and electrical characteristics of graphene derived from graphene oxide. Uniform large currents are measured over areas exceeding tens of micrometers in few layer films, supporting the use of graphene as a transparent electrode material. Moreover, defects such as electrical discontinuities are easily detected. Multilayer films are found to have a higher conductivity per layer than single layers. It is also shown that a local AFM tip-induced electrochemical reduction process can be used to pattern conductive pathways on otherwise insulating graphene oxide. Transistors with micrometer-scale tip-reduced graphene channels were successfully fabricated, featuring ambipolar transport and an 8 order of magnitude increase in current density upon reduction.

Partners : UdS

Place of Publication : Washington

Date of Publication : 2010/07/22

Additional Data : J. AM. CHEM. SOC. 2010, 132, 14130–14136

Link to the online version of the article.

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