Low-temperature printing of crystalline: crystalline polymer blend transistors
David Sparrowe, Mohammed Baklar and Natalie Stingelin, Amsterdam (2010)
By blending poly(3-hexylthiophene) with poly(vinylidene fluoride) and with careful solvent selection, field-effect transistors are fabricated from solution with deposition temperatures suitable for use in low-cost roll-to-roll manufacturing techniques. A percolation threshold of only 3 wt.% P3HT is demonstrated, with field-effect mobilities of 0.04 cm2/Vs obtained in such PVDF-rich blend devices being equal to neat P3HT field-effect transistors. We illustrate the potential of this material system by the fabrication of working field-effect transistor devices, wherein the semiconductor blend is deposited via flexo-printing. Flexible polyethylene naphthalate substrates and an organic gate dielectric were utilized for this purpose.
Partners : ICL and Merck
Place of Publication : Amsterdam
Date of Publication : 2010/05/06
Additional Data : ORGANIC ELECTRONICS, Volume: 11 Issue: 7