Organic Nonvolatile Memory Devices Based on Ferroelectricity

Ronald C. G. Naber, Kamal Asadi, Paul W. M. Blom, Dago M. de Leeuw and Bert de Boer, Weinheim (2010)

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.

Partners : RuG, Philips, TNO

Place of Publication : Weinheim

Date of Publication : 2009/08/19

Additional Data : ADVANCED MATERIALS, Volume: 22 Issue: 9

Link to the online version of the article.