Organic Nonvolatile Memory Devices Based on Ferroelectricity
Ronald C. G. Naber, Kamal Asadi, Paul W. M. Blom, Dago M. de Leeuw and Bert de Boer, Weinheim (2010)
A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.
Partners : RuG, Philips, TNO
Place of Publication : Weinheim
Date of Publication : 2009/08/19
Additional Data : ADVANCED MATERIALS, Volume: 22 Issue: 9