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Selective growth of α-sexithiophene by using silicon oxides patterns

Cristiano Albonetti, Marianna Barbalinardo, Silvia Milita, Massimiliano Cavallini, Fabiola Liscio, Jean-François Moulin and Fabio Biscarini, Basel (2011)

A process for fabricating ordered organic films on large area is presented. The process allows growing sexithiophene ultra-thin films at precise locations on patterned Si/SiOx substrates by driving the orientation of growth. This process combines the parallel local anodic oxidation of Si/SiOx substrates with the selective arrangement of molecular ultra-thin film. The former is used to fabricate silicon oxide arrays of parallel lines of 400 nm in width over an area of 1 cm2. Selective growth arises from the interplay between kinetic growth parameters and preferential interactions with the patterned surface. The result is an ultra-thin film of organic molecules that is conformal to the features of the fabricated motives.

Partners : CNR

Place of Publication : Basel

Date of Publication : 2011/09/06

Additional Data : Int. J. Mol. Sci. 2011, 12, 5719-5735

Link to the online version of the article.